RT info:eu-repo/semantics/article
T1 Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films
A1 Kalam, Kristjan
A1 Seemen, Helina
A1 Mikkor, Mats
A1 Ritslaid, Peeter
A1 Stern, Raivo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Tamm, Aile
A1 Kukli, Kaupo
K1 Thin films
K1 Láminas delgadas
K1 Atomic layer deposition
K1 Deposición atómica de capas
AB Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300°C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition.
PB IOP Publishing
SN 2162-8777
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44663
UL http://uvadoc.uva.es/handle/10324/44663
LA eng
NO ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 9. p. 117-122
NO Producción Científica
DS UVaDOC
RD 27-abr-2024