RT info:eu-repo/semantics/article
T1 Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates
A1 Kukli, Kaupo
A1 Kemell, Marianna
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Seemen, Helina
A1 Rähn, Mihkel
A1 Link, Joosep
A1 Stern, Raivo
A1 Ritala, Mikko
A1 Leskelä, Markku
K1 Metal oxides
K1 Óxidos metálicos
K1 Nanolaminates
K1 Nanoláminas
K1 Atomic layer deposition
K1 Deposición atómica de capas
AB Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350°C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states.
PB IOP Publishing
SN 2162-8777
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44665
UL http://uvadoc.uva.es/handle/10324/44665
LA eng
NO ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 9. p. 501-508
NO Producción Científica
DS UVaDOC
RD 24-nov-2024