RT info:eu-repo/semantics/conferenceObject
T1 Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 González Ossorio, Óscar
A1 Domínguez, Leidy Azucena
A1 García García, Héctor
A1 Kalam, Kristjan
A1 Kukli, Kaupo
A1 Ritala, Mikko
A1 Leskelä, Markku
K1 Resistive memories
K1 Momorias resistivas
AB The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role.
PB IEEE Xplore
SN 978-1-5386-5108-7
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/44667
UL http://uvadoc.uva.es/handle/10324/44667
LA eng
NO 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS). Barcelona: IEE Xplore, 2017, 4 p.
NO Producción Científica
DS UVaDOC
RD 24-nov-2024