RT info:eu-repo/semantics/article
T1 Current pulses to control the conductance in RRAM devices
A1 García García, Héctor
A1 Dueñas Carazo, Salvador
A1 González Ossorio, Óscar
A1 Castán Lanaspa, María Helena
K1 Conductive filament
K1 Filamento conductivo
K1 Multilevel storage
K1 Almacenamiento multinivel
AB Due to the high number of reachable conductance levels in resistive switching devices, theyare good candidates to implement artificial synaptic devices. In this work, we have studied the control ofthe intermediate conductance levels in HfO2-based MIM capacitors using current pulses. The set transitioncan be controlled in a linear way using this kind of signal. The potentiation characteristic is not affectedby the pulse length due to the filament formation takes place in very short times. This behavior does notallow using identical pulses to obtain the potentiation characteristic. The transient response of the deviceswhen applying current pulses showed the filament formation is characterized by a peak in the voltagetransient signal. No depression characteristic can be obtained using current signals due to the abrupt resettransition. However, the depression characteristic can be obtained using voltage pulses, so combining bothsignals should allow control the synaptic weight in an appropriate way.
PB IEEE Xplore
SN 2168-6734
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/44675
UL http://uvadoc.uva.es/handle/10324/44675
LA spa
NO Journal of the Electron Devices Society, 2020, vol. 8. p. 291 - 296
NO Producción Científica
DS UVaDOC
RD 22-dic-2024