RT info:eu-repo/semantics/conferenceObject
T1 Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films
A1 González Ossorio, Óscar
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Tamm, Aile
A1 Kalam, Kristjan
A1 Seemen, Helina
A1 Kukli, Kaupo
K1 Electrical characterization
K1 Caracterización eléctrica
K1 Atomic layer deposition
K1 Deposición atómica de capas
K1 Resistive switching
K1 Conmutación resistiva
AB In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers.
PB IEEE Xplore
SN 978-1-5386-5779-9
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44677
UL http://uvadoc.uva.es/handle/10324/44677
LA eng
NO 2018 Spanish Conference on Electron Devices (CDE). Salamanca, Spain: IEEE Xplore, 2018
NO Producción Científica
DS UVaDOC
RD 16-ago-2024