RT info:eu-repo/semantics/article
T1 Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition
A1 Kukli, Kaupo
A1 Kemell, Marianna
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Link, Joosep
A1 Stern, Raivo
A1 Heikkilä, Mikko J.
A1 Jõgiaas, Taivo
A1 Kozlova, Jekaterina
A1 Rähn, Mihkel
A1 Mizohata, Kenichiro
K1 Magnetic hysteresis
K1 Histéresis magnética
K1 Atomic layer deposition
K1 Deposición atómica de capas
K1 Chemical compounds
K1 Compuestos químicos
K1 Nanomaterials
K1 Nanomateriales
AB SiO2-Fe2O3 mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 °C. Orthorhombic ɛ-Fe2O3 was identified in Fe2O3 reference films and in Fe2O3 layers grown to certain thicknesses between amorphous SiO2 layers. SiO2-Fe2O3 films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.
PB AIP Publishing
SN 1520-8559
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/44701
UL http://uvadoc.uva.es/handle/10324/44701
LA eng
NO Journal of Vacuum Science & Technology A, 2020, vol. 38, n. 4. 11 p.
NO Producción Científica
DS UVaDOC
RD 19-abr-2024