RT info:eu-repo/semantics/article
T1 Structure and behavior of ZrO2-graphene-ZrO2 stacks
A1 Kahro, Tauno
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Merisalu, Joonas
A1 Kozlova, Jekaterina
A1 Jõgiaas, Taivo
A1 Piirsoo, Helle-Mai
A1 Kasikov, Aarne
A1 Ritslaid, Peeter
A1 Mändar, Hugo
A1 Tarre, Aivar
A1 Tamm, Aile
A1 Kukli, Kaupo
K1 Atomic layer deposition
K1 Deposición atómica de capas
K1 Nanomaterials
K1 Nanomaterials
K1 Thin films
K1 Láminas delgadas
K1 Graphene
K1 Grafeno
AB ZrO2-graphene-ZrO2 layered structures were built and their crystallinity was characterized before resistive switching measurements. Thin nanocrystalline ZrO2 dielectric films were grown by atomic layer deposition on chemical vapor deposited graphene. Graphene was transferred, prior to the growth of the ZrO2 overlayer, to the ZrO2 film pre-grown on titanium nitride. Nucleation and growth of the top ZrO2 layer was improved after growing an amorphous Al2O3 interface layer on graphene at lowered temperatures. Studies on resistive switching in such structures revealed that the exploitation of graphene interlayers could modify the operational voltage ranges and somewhat increase the ratio between high and low resistance states.
PB AIP Publishing
SN 1520-8559
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/44705
UL http://uvadoc.uva.es/handle/10324/44705
LA eng
NO Journal of Vacuum Science & Technology A, 2020, vol. 38, n. 6. 10 p.
NO Producción Científica
DS UVaDOC
RD 25-abr-2024