RT info:eu-repo/semantics/conferenceObject T1 Single and complex devices on three topological configurations of HfO2 based RRAM A1 González Ossorio, Óscar A1 Poblador Cester, Samuel A1 Vinuesa Sanz, Guillermo A1 Dueñas Carazo, Salvador A1 Castán Lanaspa, María Helena A1 Maestro Izquierdo, Marcos A1 Bargalló González, Mireia A1 Campabadal Segura, Francesca K1 Hafnium oxide K1 Óxido de hafnio K1 RRAM chips K1 Chips RRAM AB Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. The different topologies are obtained by customizing the layouts corresponding to the bottom electrode (W), and the silicon oxide layer that is deposited on the bottom electrode. A comparative study of the resistive switching mechanisms in the three configurations has been carried out. DC current-voltage cycles and small signal conductance memory maps of single RRAM show relevant differences among the three topologies. Complex structures containing various devices (series, anti-series, parallel, antiparallel) have also been fabricated. Switching loops and memory maps obtained for these complex structures demonstrate that they are fully operative, validating the technological route to manufacture complete RRAM memory chips. PB IEEE Xplore SN 978-1-7281-1044-8 YR 2020 FD 2020 LK http://uvadoc.uva.es/handle/10324/44719 UL http://uvadoc.uva.es/handle/10324/44719 LA eng NO 2020 IEEE Latin America Electron Devices Conference (LAEDC). San Jose, Costa Rica: IEEE Xplore, 2020 NO Producción Científica DS UVaDOC RD 06-oct-2024