RT info:eu-repo/semantics/conferenceObject
T1 Single and complex devices on three topological configurations of HfO2 based RRAM
A1 González Ossorio, Óscar
A1 Poblador Cester, Samuel
A1 Vinuesa Sanz, Guillermo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Maestro Izquierdo, Marcos
A1 Bargalló González, Mireia
A1 Campabadal Segura, Francesca
K1 Hafnium oxide
K1 Óxido de hafnio
K1 RRAM chips
K1 Chips RRAM
AB Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. The different topologies are obtained by customizing the layouts corresponding to the bottom electrode (W), and the silicon oxide layer that is deposited on the bottom electrode. A comparative study of the resistive switching mechanisms in the three configurations has been carried out. DC current-voltage cycles and small signal conductance memory maps of single RRAM show relevant differences among the three topologies. Complex structures containing various devices (series, anti-series, parallel, antiparallel) have also been fabricated. Switching loops and memory maps obtained for these complex structures demonstrate that they are fully operative, validating the technological route to manufacture complete RRAM memory chips.
PB IEEE Xplore
SN 978-1-7281-1044-8
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/44719
UL http://uvadoc.uva.es/handle/10324/44719
LA eng
NO 2020 IEEE Latin America Electron Devices Conference (LAEDC). San Jose, Costa Rica: IEEE Xplore, 2020
NO Producción Científica
DS UVaDOC
RD 08-ago-2024