RT info:eu-repo/semantics/conferenceObject
T1 Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices
A1 García García, Héctor
A1 González Ossorio, Óscar
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
K1 Synaptic devices
K1 Dispositivos sinápticos
K1 Multilevel storage
K1 Almacenamiento multinivel
K1 Hafnium oxide
K1 Óxido de hafnio
AB Artificial synaptic devices used in neuromorphic systems need a high number of reachable conductance levels. Resistive switching devices are promising candidates to implement these devices due to their reachable conductance levels. In this work, we have used TiN/Ti/HfO 2 /W capacitors to study the control of the intermediate conductance states using current pulses instead of the usual voltage pulses. Unlike the use of voltage pulses, in this case we can control the HRS to LRS transition (potentiation characteristic). The characteristic is clearly linear when applying current pulses with linearly increasing amplitudes. The potentiation characteristic is not affected by the pulse length, even for lengths lower than 1 μs. In terms of peripheral circuitry, it is desirable to use pulses with identical amplitudes, but in this case no accumulative behavior is observed, and one current pulse is enough to carry the device to the final conductance state achieved for the amplitude used. Finally, it is not possible to control the HRS to LRS transition (depression characteristic) using current pulses due to the abrupt reset transition. However, this transition can be well controlled using voltage pulses.
PB IEEE Xplore
SN 978-1-7281-1044-8
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/44731
UL http://uvadoc.uva.es/handle/10324/44731
LA eng
NO 2020 IEEE Latin America Electron Devices Conference (LAEDC). San Jose, Costa Rica: IEEE Xplore, 2020
NO Producción Científica
DS UVaDOC
RD 01-sep-2024