RT info:eu-repo/semantics/article
T1 Memory maps : Reading RRAM devices without power consumption
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Kukli, Kaupo
A1 Mikkor, Mats
A1 Kalam, Kristjan
A1 Arroval, T.
A1 Tamm, Aile
K1 Memory maps
K1 Mapas de memoria
AB A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms.
PB IOP Publishing
SN 1938-6737
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44918
UL http://uvadoc.uva.es/handle/10324/44918
LA eng
NO ECS Transactions, 2018, vol. 85, n. 8. p. 201-205
NO Producción Científica
DS UVaDOC
RD 25-abr-2024