RT info:eu-repo/semantics/article
T1 Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Kukli, Kaupo
A1 Kemell, Marianna
A1 Ritala, Mikko
A1 Leskelä, Markku
K1 Memory maps
K1 Mapas de memoria
AB The memory behavior of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps.
PB IOP Publishing
SN 1938-6737
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44919
UL http://uvadoc.uva.es/handle/10324/44919
LA eng
NO ECS Transactions, 2018, vol. 85, n. 8. 6 p.
NO Producción Científica
DS UVaDOC
RD 26-abr-2024