RT info:eu-repo/semantics/article
T1 Atomic layer deposition and performance of ZrO2-Al2O3 thin films
A1 Kukli, Kaupo
A1 Kemell, Marianna
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Seemen, Helina
A1 Rähn, Mihkel
A1 Link, Joosep
A1 Stern, Raivo
A1 Heikkilä, Mikko J.
A1 Ritala, Mikko
A1 Leskelä, Markku
K1 Atomic layer deposition
K1 Deposición atómica de capas
K1 Thin films
K1 Láminas delgadas
K1 Metal oxides
K1 Óxidos metálicos
AB Thin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer deposition from the corresponding metal chlorides and water. The films were grown at 350°C in order to ensure ZrO2 crystallization in the as-deposited state. The relative thicknesses of layers in the structure of the nanolaminates were controlled in order to maximize the content of metastable polymorphs of ZrO2 that have higher permittivity than that of the stable monoclinic ZrO2. The multilayer films demonstrated interfacial charge polarization and saturative magnetization in external fields. The conductivity of the films could be switched between high and low resistance states by applying voltages of alternating polarity.
PB IOP Publishing
SN 2162-8777
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44922
UL http://uvadoc.uva.es/handle/10324/44922
LA eng
NO ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 5. 26 p.
NO Producción Científica
DS UVaDOC
RD 24-nov-2024