RT info:eu-repo/semantics/article
T1 The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 García García, Héctor
A1 González Ossorio, Óscar
A1 Domínguez, Leidy Azucena
A1 Seemen, Helina
A1 Tamm, Aile
A1 Kukli, Kaupo
A1 Aarik, Jaan
K1 Resistive switching
K1 Conmutación resistiva
K1 Tantalum oxide
K1 Pentóxido de tántalo
K1 Titanium oxide
K1 Óxido de titanio
AB We describe the role of defects in the resistive switching behavior of metal–insulator–metal devices based on alternating Ta2O5 and TiO2 stacks. Ruthenium oxide (RuOx) and platinum (Pt) were used as bottom and top electrodes, respectively. Insulator stacks with thickness of 5 nm were fabricated by atomic layer deposition of alternating Ta2O5 and TiO2 thin films. Bipolar resistive switching behavior was obtained for Ta2O5-TiO2-Ta2O5 and TiO2-Ta2O5-TiO2 stacks, being mainly due to presence of oxygen vacancy defects. The best memristive response was obtained in the case of two TiO2 films embedding a monolayer of Ta2O5. Highly repeatable direct-current (DC)-voltage bipolar switching cycles were obtained. Small-signal admittance parameters also showed hysteretic behavior during a whole bipolar switching cycle. In the case of samples with three layers of similar thickness, when the transition from ON to OFF state (reset) occurred, the conductance abruptly increased and the susceptance decreased quickly for more negative voltages values. Such behavior was not observed when only one Ta2O5 monolayer was examined. These differences can be explained in terms of the charge transport mechanism occurring in the open conductive filaments.
PB Springer Link
SN 1543-186X
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/45137
UL http://uvadoc.uva.es/handle/10324/45137
LA eng
NO Journal of Electronic Materials, 2018, vol. 47, n. 9. p. 4938-4943
NO Producción Científica
DS UVaDOC
RD 12-sep-2024