RT info:eu-repo/semantics/article
T1 Dynamics of set and reset processes on resistive switching memories
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 González Ossorio, Óscar
A1 García García, Héctor
K1 Resistive switching
K1 Conmutación resistiva
AB In this work, we have characterized hafnium oxide based bipolar resistive switching memories (RRAM) by measuring the small-signal conductance. The samples under study exhibit a continuum of intermediate states which can be accurately controlled by means of adequate sequence of the applied stimulus. The experimental results are analyzed to obtain information on the dynamics of the set and reset processes. This study reveals that ON-to-OFF (reset) and OFF-to-ON (set) processes are not symmetrical. Set transition is gradual and depends on the voltage stimulus according to an Erlang function which consists of a sum of k independent and identically distributed mechanisms, each having an exponential distribution. In contrast, reset process is more abrupt and can be described by a sigmoidal law. Time dependencies of set and reset process at fixed voltage values are explored as well. Set process is gradual at any positive voltage, whereas reset process is characterized by a time constant which depends on the applied voltage. Experimental results are explained in terms of the formation of interfacial barrier between the top electrode and the conductive filament.
PB Elsevier
SN 0167-9317
YR 2019
FD 2019
LK http://uvadoc.uva.es/handle/10324/45138
UL http://uvadoc.uva.es/handle/10324/45138
LA eng
NO Microelectronic Engineering, 2019, vol. 216. 4 p.
NO Producción Científica
DS UVaDOC
RD 27-abr-2024