RT info:eu-repo/semantics/article
T1 Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane
A1 Kukli, Kaupo
A1 Kemell, Marianna
A1 Heikkilä, Mikko J
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Mizohata, Kenichiro
A1 Ritala, Mikko
A1 Leskelä, Markku
K1 Deposición de capa atómica
K1 Atomic layer deposition
K1 2202 Electromagnetismo
AB Amorphous SiO2–Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11–7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current–voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
PB IOP Publishing
SN 0957-4484
YR 2020
FD 2020
LK http://uvadoc.uva.es/handle/10324/45172
UL http://uvadoc.uva.es/handle/10324/45172
LA eng
NO Nanotechnology, 2020, Volume 31, Number 19
NO Producción Científica
DS UVaDOC
RD 12-nov-2024