RT info:eu-repo/semantics/article
T1 Controlling the intermediate conductance states in RRAM devices for synaptic applications
A1 García García, Héctor
A1 González Ossorio, Óscar
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
K1 Resistive memories
K1 Memorias resistivas
K1 Synaptic devices
K1 Dispositivos sinápticos
K1 3307.90 Microelectrónica
AB RRAM devices are promising candidates to implement artificial synaptic devices for their use in neuromorphic systems, due to their high number or reachable conductance levels. The capacitors used in this work (TiN/Ti/ HfO2/W) show resistive switching behavior and reachable intermediate conductance states. We can control the conductance states by applying voltage pulses to the top electrode. Different approaches to control the synaptic weight have been studied: applying pulses with different voltage amplitudes changes the synaptic weight variation in an exponential way, and applying pulses with different lengths changes the synaptic weight in a linear way. We can control the conductance values when applying depression pulses, but the potentiation characteristic is not linear, as for other synaptic devices, as PRAMs. Applying other voltage signals to the structure, as voltage ramps, can improve the potentiation characteristic.
PB Elsevier
SN 0167-9317
YR 2019
FD 2019
LK http://uvadoc.uva.es/handle/10324/45394
UL http://uvadoc.uva.es/handle/10324/45394
LA eng
NO Microelectronic Engineering, 2019, vol. 215. 14 p.
NO Producción Científica
DS UVaDOC
RD 24-abr-2024