RT info:eu-repo/semantics/article
T1 Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications
A1 García García, Héctor
A1 Bargalló González, Mireia
A1 Mallol, M. M.
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Campabadal Segura, Francesca
A1 Acero, M. C.
A1 Sambuco Salomone, L.
A1 Faigón, A.
K1 Hafnium oxide
K1 Óxido de hafnio
K1 Resistive memories
K1 Memorias resistivas
AB The γ-radiation effects on the electrical characteristics of metal–insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole–Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.
PB Springer Link
SN 0361-5235
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/45397
UL http://uvadoc.uva.es/handle/10324/45397
LA eng
NO Journal of Electronic Materials, 2018, vol. 47. p. 5013-5018
NO Producción Científica
DS UVaDOC
RD 11-jul-2024