RT info:eu-repo/semantics/bookPart
T1 Atomistic modeling of laser-related phenomena
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 López Martín, Pedro
A1 Santos Tejido, Iván
A1 Pelaz Montes, María Lourdes
A1 Fisicaro, Giuseppe
K1 Dinámica molecular
K1 Molecular dynamics
K1 Simulación atomística
K1 Atomistic simulation
AB Due to the intrinsic features of laser annealing treatments in semiconductors, i.e., localized irradiation with a space- and time-dependent thermal field that leads to far-from-equilibrium conditions, experimental analysis can reveal only specimen postirradiation characteristics. In order to understand how the laser-irradiated system evolves and reaches its final state, a theoretical work based on full process simulation is required. Traditional models for laser processing simulation were based on continuum techniques. However, they prove to be insufficient at the nanoscale. Atomistic simulation techniques, in turn, are handy for studying detailed interactions, at both electronic and atomic levels, including out-of-equilibrium situations as those present in laser processing. In this chapter, we review the main techniques for atomistic simulation to be applied for laser modeling. We also present some recent results on atomistic modeling of laser-related phenomena in Si, in particular melting and regrowth processes, defect and dopant kinetics, dopant segregation, and the anomalous formation of extended defects.
PB Elsevier
SN 978-0-12-820255-5
YR 2021
FD 2021
LK http://uvadoc.uva.es/handle/10324/46388
UL http://uvadoc.uva.es/handle/10324/46388
LA eng
NO Marqués, L. A., Aboy, M., López, P., Santos, I., Pelaz, L., Fisicaro, G. Atomistic modeling of laser-related phenomena. In: Laser Annealing Processes in Semiconductor Technology Theory, Modeling and Applications in Nanoelectronics Woodhead Publishing Series in Electronic and Optical Materials, 2021, Pages 79-136
NO Producción Científica
DS UVaDOC
RD 26-abr-2024