RT info:eu-repo/semantics/article T1 Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone A1 Kalam, Kristjan A1 Rammula, Raul A1 Ritslaid, Peeter A1 Käämbre, Tanel A1 Link, Joosep A1 Stern, Raivo A1 Vinuesa Sanz, Guillermo A1 Dueñas Carazo, Salvador A1 Castán Lanaspa, María Helena A1 Tamm, Aile A1 Kukli, Kaupo K1 Atomic layer deposition K1 Deposición de capas atómicas K1 Thin films K1 Láminas delgadas K1 Magnetic materials K1 Materiales magnéticos K1 Resistive switching K1 Conmutación resistiva AB Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnOx layers. All depositions were carried out at 300 ºC. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as crystallinity and the dependence of growth rate on the deposition temperature. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO2, while the manganese oxide was shown to consist of cubic Mn2O3 and tetragonal Mn3O4 phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics. PB IOP Publishing SN 1361-6528 YR 2021 FD 2021 LK http://uvadoc.uva.es/handle/10324/46598 UL http://uvadoc.uva.es/handle/10324/46598 LA eng NO Nanotechnology, 2021. In press. 27 p. NO Producción Científica DS UVaDOC RD 08-oct-2024