RT info:eu-repo/semantics/article
T1 Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media
A1 Kahro, Tauno
A1 Tarre, Aivar
A1 Käämbre, Tanel
A1 Piirsoo, Helle-Mai
A1 Kozlova, Jekaterina
A1 Ritslaid, Peeter
A1 Kasikov, Aarne
A1 Jõgiaas, Taivo
A1 Vinuesa Sanz, Guillermo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Tamm, Aile
A1 Kukli, Kaupo
K1 Graphene
K1 Grafeno
K1 Atomic layer deposition
K1 Deposición atómica de capas
K1 Hafnium oxide
K1 Óxido de hafnio
K1 Stacked nanostructures
K1 Nanoestructuras apiladas
AB Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states.
PB ACS Publications
SN 2574-0970
YR 2021
FD 2021
LK http://uvadoc.uva.es/handle/10324/46600
UL http://uvadoc.uva.es/handle/10324/46600
LA eng
NO ACS Applied Nano Materials, 2021. In press. 12 p.
NO Producción Científica
DS UVaDOC
RD 22-nov-2024