RT info:eu-repo/semantics/article
T1 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
A1 González Ossorio, Óscar
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Sahelices Fernández, Benjamín
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Pérez, Eduardo
A1 Kalishettyhalli Mahadevaiah, Mamathamba
A1 Wenger, Christian
K1 RRAM
K1 Hafnium oxide
K1 Óxido de hafnio
K1 Neuromorphic Applications
K1 Aplicaciones neuromórficas
K1 22 Física
K1 2210.05 Electroquímica
K1 33 Ciencias Tecnológicas
AB The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.
PB Electrochemical Society
SN 1938-5862
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/48621
UL https://uvadoc.uva.es/handle/10324/48621
LA eng
NO ECS Transactions, 2021, vol. 102, n. 2, p. 29-35
NO Producción Científica
DS UVaDOC
RD 16-abr-2024