RT info:eu-repo/semantics/article
T1 Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
A1 Vinuesa Sanz, Guillermo
A1 González Ossorio, Óscar
A1 García García, Héctor
A1 Sahelices Fernández, Benjamín
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Kukli, Kaupo
A1 Kull, M
A1 Tarre, Aivar
A1 Jõgiaas, Taivo
A1 Tamm, Aile
A1 Kasikov, Aarne
K1 RRAM
K1 Hafnium oxide
K1 Aluminium oxide
K1 Hafnium-aluminum oxide
K1 22 Física
K1 33 Ciencias Tecnológicas
AB Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.
PB Elsevier
SN 0038-1101
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/48633
UL https://uvadoc.uva.es/handle/10324/48633
LA eng
NO Solid-State Electronics, 2021, vol. 183, p.108085
NO Producción Científica
DS UVaDOC
RD 26-abr-2024