RT info:eu-repo/semantics/article
T1 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
A1 González Ossorio, Óscar
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Sahelices Fernández, Benjamín
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Ritala, Mikko
A1 Leskelä, Markku
A1 Kemell, Marianna
A1 Kukli, Kaupo
K1 RRAM
K1 Niobium oxide
K1 Silicon oxide
K1 22 Física
K1 33 Ciencias Tecnológicas
AB Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of differenttechnologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristicsof RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that showa clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels betweenhigh-resistance and low-resistance states.
PB Elsevier
SN 0038-1101
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/48634
UL https://uvadoc.uva.es/handle/10324/48634
LA eng
NO Solid-State Electronics, 2021, vol. 186, p. 108114
NO Producción Científica
DS UVaDOC
RD 01-sep-2024