RT info:eu-repo/semantics/article
T1 Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
A1 García García, Héctor
A1 Vinuesa Sanz, Guillermo
A1 González Ossorio, Óscar
A1 Sahelices Fernández, Benjamín
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 Bargalló González, Mireia
A1 Campabadal Segura, Francesca
K1 ReRAM devices
K1 Electrical characterization
K1 Hafnium oxide
K1 22 Física
K1 33 Ciencias Tecnológicas
AB In  this  work,  we  have  studied  the  set  and  the  reset  transitions  in  hafnium  oxide-based metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional  voltage  or  current  signal,  we  have  discharged  a  capacitor  through  the devices  to  perform  both  transitions.  In  this  way,  both  transitions  are  shown  to  be controllable.  An  accumulative  process  is  observed  if  we  apply  consecutive  discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages.
PB Elsevier
SN 0038-1101
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/48639
UL https://uvadoc.uva.es/handle/10324/48639
LA eng
NO Solid-State Electronics, 2021, vol. 183, p. 108113
NO Producción Científica
DS UVaDOC
RD 27-dic-2024