RT info:eu-repo/semantics/article
T1 Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence
A1 Landesman, Jean-Pierre
A1 Goktas, Nebile Isik
A1 LaPierre, Ray R.
A1 Ghanad-Tavakoli, Shahram
A1 Pargon, Erwine
A1 Petit-Etienne, Camille
A1 Levallois, Christophe
A1 Jiménez López, Juan Ignacio
A1 Dadgostar, Shabnam
K1 Plasma etching
K1 Grabado con plasma
K1 Photoluminescence
K1 Fotoluminiscencia
K1 Cathodoluminescence
K1 Catodoluminiscencia
AB Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAsxP1-x quantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH4/H2/Ar and Cl2/CH4/Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the intensity variation of the emissions associated with the quantum wells across the stripes. The possible origins of these effects are investigated in terms of carrier recombination on the vertical sidewalls of the stripes and lateral diffusion of species from the plasma during etching. Cathodoluminescence measurements on samples under DC-bias also show the quantum confined Stark effect which is correlated to the material modifications induced by the etching.
PB IOP Publishing
SN 1938-5862
YR 2020
FD 2020
LK https://uvadoc.uva.es/handle/10324/49399
UL https://uvadoc.uva.es/handle/10324/49399
LA eng
NO ECS Transactions, 2020, vol. 97, n. 2. p. 43-55
NO Producción Científica
DS UVaDOC
RD 12-jul-2024