RT info:eu-repo/semantics/article
T1 Mechanical stress in InP and GaAs ridges formed by reactive ion etching
A1 Landesman, Jean-Pierre
A1 Fouchier, Marc
A1 Pargon, Erwine
A1 Gérard, Solène
A1 Rochat, Névine
A1 Levallois, Christophe
A1 Mokhtari, Merwan
A1 Pagnod-Rossiaux, Philippe
A1 Laruelle, Francois
A1 Petit-Etienne, Camille
A1 Bettiati, Mauro
A1 Jiménez López, Juan Ignacio
A1 Cassidy, Daniel T.
K1 Plasma processing
K1 Procesamiento de plasma
K1 Photonic materials
K1 Materiales fotónicos
K1 Photoluminescence
K1 Fotoluminiscencia
K1 Cathodoluminescence
K1 Catodoluminiscencia
AB The mechanical deformation induced by reactive ion etching (RIE) of rectangular ridge waveguides in GaAs and InP has been investigated by photoluminescence and cathodoluminescence techniques. Several trends were identified and are discussed. First, it is concluded that the RIE process itself is the source of the mechanical deformation. A compressive volume change occurs mainly within the ridge (with a maximum close to the vertical etched sidewalls), extending outside the ridges, up to several micrometers below the bottom etched surface. An anisotropic deformation also appears, again mainly close to the etched sidewalls and below the bottom etched surface. A narrow area under tensile stress was also identified, localized outside the ridges and in a shallow region below the bottom etched surface. Cumulative, overlapping effects are seen inside the ridges where the compressive stress fields originating at the vertical etched sidewalls contribute to an overall compression inside the ridge which increases as the ridge width decreases. In addition, a tensile stress is also observed outside the ridge, strongly enhanced by the presence of neighboring ridges. These conclusions are significant for the design of photonic structures. Because of the photoelastic effect, which is important in GaAs and InP, the properties of devices such as waveguides might be affected by the mechanical stress described herein.
PB AIP Publishing
SN 1089-7550
YR 2020
FD 2020
LK https://uvadoc.uva.es/handle/10324/49419
UL https://uvadoc.uva.es/handle/10324/49419
LA eng
NO Journal of Applied Physics, 2020, vol. 128, n. 22. 12 p.
NO Producción Científica
DS UVaDOC
RD 12-jul-2024