RT info:eu-repo/semantics/conferenceObject
T1 Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates
T2 CDE, 2021
A1 Orejuela, Víctor
A1 García, Iván
A1 Sánchez, Clara
A1 Hinojosa, Manuel
A1 Dadgostar, Shabnam
A1 Ghosh, Monalisa
A1 Roca i Cabarrocas, Pere
A1 Rey Stolle, Ignacio
K1 Multijunction solar cells
K1 Células fotovoltaicas multiunión
K1 Germanium
K1 Germanio
K1 Silicon
K1 Silicio
AB Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2-5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by low-temperature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations, ...), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented.
PB IEEE Xplore
SN 978-1-6654-4452-1
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/49445
UL https://uvadoc.uva.es/handle/10324/49445
LA eng
NO Proceedings of the 2021 13th Spanish Conference on Electron Devices (CDE). Sevilla, Spain: IEEE, 2021, p. 27-31
NO Producción Científica
DS UVaDOC
RD 26-jun-2024