RT info:eu-repo/semantics/article
T1 Electrical activity of crystal defects in multicrystalline Si
A1 Moretón, A.
A1 Jiménez, M. M.
A1 Dadgostar, Shabnam
A1 Martínez Sacristán, Óscar
A1 González Rebollo, Miguel Ángel
A1 Jiménez López, Juan Ignacio
K1 Multicrystalline silicon
K1 Silicio policristalino
K1 Grain boundaries
K1 Bordes de grano
AB Upgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impurities is studied for cells fabricated on wafers from different solidification heights of the ingot. A tight relation is observed between the electrical activity of the grain boundaries and the position of the wafer in the ingot, which is related to the impurity contamination. The presence of a large amount of metallic impurities enhances the electrical activity of the grain boundaries. The main features of the LBIC images are discussed in relation to the presence of metallic impurities.
PB Springer Link
SN 0361-5235
YR 2020
FD 2020
LK https://uvadoc.uva.es/handle/10324/49451
UL https://uvadoc.uva.es/handle/10324/49451
LA eng
NO Journal of Electronic Materials, 2020, vol. 49. p. 5091-5096
NO Producción Científica
DS UVaDOC
RD 11-jul-2024