RT info:eu-repo/semantics/article
T1 A cathodoluminescence study on the diffusion length in AlGaInP/InGaP/AlInP solar cell heterostructures
A1 Dadgostar, Shabnam
A1 Belloso Casuso, Cantia
A1 Martínez Sacristán, Óscar
A1 Hinojosa, Manuel
A1 García, Iván
A1 Jiménez López, Juan Ignacio
K1 Cathodoluminescence
K1 Catodoluminiscencia
K1 Multijunction solar cells
K1 Células fotovoltaicas multiunión
K1 Optoelectronic devices
K1 Dispositivos optoelectrónicos
AB The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the intersection between a thin metallic mask and the semiconductor; a second approach consists of the measurement of the intensity profile around an intentional scratch on the surface of the sample. A longer diffusion length is measured when using the metallic mask as compared with the scratch. We discuss the role of non-radiative recombination centers in the reduction of the diffusion length around the scratch. The temperature dependence of the diffusion length is also measured, and the length is found to decrease with temperature.
PB Springer Link
SN 0361-5235
YR 2020
FD 2020
LK https://uvadoc.uva.es/handle/10324/49452
UL https://uvadoc.uva.es/handle/10324/49452
LA eng
NO Journal of Electronic Materials, 2020, vol. 49. p. 5184–5189
NO Producción Científica
DS UVaDOC
RD 22-nov-2024