RT info:eu-repo/semantics/article
T1 Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films
A1 Montedoro, Vincenzo
A1 Torres Pérez, Alfredo
A1 Dadgostar, Shabnam
A1 Jiménez López, Juan Ignacio
A1 Bosi, Matteo
A1 Parisini, Antonella
A1 Fornari, Roberto
K1 Gallium oxide
K1 Óxido de galio
K1 Cathodoluminescence
K1 Catodoluminiscencia
AB Cathodoluminescence (CL) investigations are performed on nominally undoped and Si-doped ε-Ga2O3 samples grown by metal-organic vapor phase epitaxy on (0001)-Al2O3 substrates, using different carrier gases. All films exhibit a broad low-temperature CL emission extending over the photon energy range 2–3.4 eV. Emission deconvolution suggests that four narrower bands centered at about 2.4, 2.75, 3.0 and 3.15 eV may well account for the broad band. While the position of these peaks results independent of the growth conditions, significant intensity differences are observed. A general reduction of the broad emission is evidenced as the Si concentration increases. No band-to-band recombination is observed. Temperature dependence of the CL signal shows a trend consistent with radiative transitions from the CB to deep acceptor states, probably of intrinsic nature.
PB Elsevier
SN 0921-5107
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/49454
UL https://uvadoc.uva.es/handle/10324/49454
LA eng
NO Materials Science and Engineering: B, 2021, vol. 264. 114918
NO Producción Científica
DS UVaDOC
RD 25-abr-2024