RT info:eu-repo/semantics/article
T1 GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission
A1 Dadgostar, Shabnam
A1 Schmidtbauer, Jan
A1 Boeck, T.
A1 Torres Pérez, Alfredo
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
A1 Tomm, Jens W.
A1 Mogilatenko, A.
A1 Masselink, W. T.
A1 Hatami, F.
K1 Heterostructures
K1 Heteroestructuras
K1 Quantum dots
K1 Puntos cuánticos
AB We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6% lattice mismatch between GaAs and GaP in the Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6 × 1010 per cm−2 and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared with the samples with smaller QDs. The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.
PB AIP Publishing
SN 1077-3118
YR 2016
FD 2016
LK https://uvadoc.uva.es/handle/10324/50611
UL https://uvadoc.uva.es/handle/10324/50611
LA eng
NO Applied Physics Letters, 2016, vol. 108, n. 10, 102103
NO Producción Científica
DS UVaDOC
RD 07-ago-2024