RT info:eu-repo/semantics/article
T1 Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons
A1 López Martín, Pedro
A1 Aboy Cebrián, María
A1 Muñoz Velasco, Irene
A1 Santos Tejido, Iván
A1 Marqués Cuesta, Luis Alberto
A1 Fernández Martínez, Pablo
A1 Ullán, Miguel
A1 Pelaz Montes, María Lourdes
K1 P-type detector
K1 Neutron irradiation
K1 Atomistic simulation
K1 22 Física
AB The effective dopant concentration in p-type Si detectors reduces with irradiation fluence at low fluences due to the acceptor removal process, which degrades detector performance and shortens its lifetime. This effect has been experimentally characterized and parametrized, but its microscopic origin is still unknown. We use atomistic simulations to gain insight into acceptor removal in neutron irradiation by modeling damage generation and defect-dopant interactions. We analyze the effect on dopant deactivation of the Si di- and tri-interstitial diffusion, the inhomogeneity of irradiation damage and the wafer temperature rise during irradiation. We characterize defect generation rates and identify the relevant defect-dopant interactions. Acceptor removal occurs mainly through the formation of Bi pairs and small boron-interstitial clusters, and it is limited by the availability of mobile Si interstitials. The presence of impurities (O, C) modifies B-complexes favoring the formation of BiO, but has a limited effect on the amount of removed acceptors.
PB Elsevier
SN 0168-583X
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/51136
UL https://uvadoc.uva.es/handle/10324/51136
LA eng
NO Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2022, vol. 512, p. 42-48
NO Producción Científica
DS UVaDOC
RD 26-abr-2024