RT info:eu-repo/semantics/conferenceObject
T1 A study of the electrical activity of crystal defects in multicrystalline si
A1 Jimenez, Marta
A1 Moretón Fernández, Ángel
A1 Colina, Juan Manuel
A1 Martínez Sacristán, Óscar
A1 González Rebollo, Miguel Ángel
A1 Jiménez López, Juan Ignacio
AB - The electrical activity of the extended defects is greatly influenced by the presence of metallic impurities.- The activity of GBs depends on the background metallic impurities, as [M] decreases the GBs loss its electrical activity.- Instead, the sub-grain boundaries present a higher electrical activity, even if [M] is reduced.- The measure of the diffusion length in the presence of high concentrations of metallic impurities can be misleading.
YR 2019
FD 2019
LK https://uvadoc.uva.es/handle/10324/52827
UL https://uvadoc.uva.es/handle/10324/52827
LA eng
NO Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019
DS UVaDOC
RD 10-nov-2024