RT info:eu-repo/semantics/conferenceObject
T1 A cathodoluminescence study on the diffusion length in InGaAlP/InGaP/GaAs heterostructures
A1 Dadgostar, Shabnam
A1 Belloso, Cantia
A1 Martinez, Oscar
A1 Jimenez, Juan
AB - Carrier recombination is critical for the operation of many devices, e.g. solar cells, light emitting diodes, and laser diodes.- The diffusion length depends on the band structure of the material, the crystal quality, alloy scattering, doping, and the presence of defects
YR 2019
FD 2019
LK https://uvadoc.uva.es/handle/10324/52844
UL https://uvadoc.uva.es/handle/10324/52844
LA spa
NO Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019
DS UVaDOC
RD 27-dic-2024