RT info:eu-repo/semantics/article
T1 Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
A1 García García, Héctor
A1 Jiménez Molinos, Francisco
A1 Vinuesa Sanz, Guillermo
A1 Bargalló González, Mireia
A1 Roldán, Juan B.
A1 Miranda, Enrique
A1 Campabadal Segura, Francesca
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
K1 Memristors
K1 Resisitive switching
K1 ReRAM
K1 Set processes
K1 Reset processes
K1 33 Ciencias Tecnológicas
K1 22 Física
AB In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.
PB Elsevier
SN 0038-1101
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/58643
UL https://uvadoc.uva.es/handle/10324/58643
LA eng
NO Solid-State Electronics, 2022, vol. 194, p. 108385
NO Producción Científica
DS UVaDOC
RD 18-nov-2024