RT info:eu-repo/semantics/article
T1 Variability and power enhancement of current controlled resistive switching devices
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Lendínez Sánchez, José Miguel
A1 García Ochoa, Eduardo
A1 González, M. B.
A1 Maldonado, D
A1 Aguilera Pedregosa, C
A1 Moreno, E
A1 Jiménez Molinos, Francisco
A1 Roldán, J.B.
A1 Campabadal Segura, Francesca
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
K1 Electricidad
K1 Electrónica
K1 Computers
K1 Resistive switching
K1 Hafnium oxide
K1 Current control
K1 RRAM
K1 Conmutación por resistencia
K1 Óxido de hafnio
K1 Control de corriente
K1 Memoria RAM
K1 3307 Tecnología Electrónica
AB In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle variability being analysed in each case. Experimental measurements indicate a clear improvement on resistance states stability when using current sweeps to induce both set and reset processes. Moreover, it has been found that using current to induce these transitions is more efficient than using voltage sweeps, as seen when analysing the device power consumption. The same results are obtained for devices with a Ni top electrode and a bilayer or pentalayer of HfO2/Al2O3 as dielectric. Finally, kinetic Monte Carlo and compact modelling simulation studies are performed to shed light on the experimental results.
PB Elsevier
SN 0167-9317
YR 2023
FD 2023
LK https://uvadoc.uva.es/handle/10324/59155
UL https://uvadoc.uva.es/handle/10324/59155
LA eng
NO Microelectronic Engineering, 2023, vol. 276, 112008
NO Producción Científica
DS UVaDOC
RD 07-ago-2024