RT info:eu-repo/semantics/article
T1 Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Bargalló González, Mireia
A1 Kalam, Kristjan
A1 Zabala, Miguel
A1 Tarre, Aivar
A1 Kukli, Kaupo
A1 Tamm, Aile
A1 Campabadal Segura, Francesca
A1 Jiménez López, Juan Ignacio
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
K1 Resistive switching
K1 Switching circuits
K1 Circuitos eléctricos
K1 Electric resistors
K1 Resistencias eléctricas
K1 Conductive filament
K1 Nonvolatile random-access memory
K1 Memoria de acceso aleatorio no volátil
K1 Polarity
K1 Oxide
K1 Hafnium
K1 Electronics
K1 Electricity
K1 2202.03 Electricidad
K1 2203 Electrónica
AB In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
PB MDPI
SN 2079-9292
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/62092
UL https://uvadoc.uva.es/handle/10324/62092
LA eng
NO Electronics, 2022, Vol. 11, Nº. 3, 479
NO Producción Científica
DS UVaDOC
RD 17-jul-2024