RT info:eu-repo/semantics/article
T1 Phonons in SiC from INS, IXS, and Ab-Initio Calculations
A1 Strauch, Dieter
A1 Dorner, B.
A1 Ivanov, A.A.
A1 Krisch, M.
A1 Bosak, A.
A1 Choyke, Wolfgang J.
A1 Stojetz, B.
A1 Malorny, Michael
A1 Serrano Gutiérrez, Jorge
AB Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined.
PB Trans Tech Publications Ltd.
YR 2006
FD 2006
LK https://uvadoc.uva.es/handle/10324/65323
UL https://uvadoc.uva.es/handle/10324/65323
LA eng
NO Materials Science Forum Vols 527-529 (2006) pp 689-694
DS UVaDOC
RD 24-dic-2024