RT info:eu-repo/semantics/article
T1 Four Current Examples of Characterization of Silicon Carbide
A1 Bai, S.
A1 Ke, Yue
A1 Shishkin, Y.
A1 Shigiltchoff, O.
A1 Devaty, R. P.
A1 Choyke, W. J.
A1 Strauch, D.
A1 Stojetz, B.
A1 Dorner, B.
A1 Hobgood, D.
A1 Cardona, M.
A1 Nagasawa, H.
A1 Kimoto, T.
A1 Porter, L. M.
A1 Serrano Gutiérrez, Jorge
AB A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperature photoluminescence (LTPL). Inelastic neutron scattering (INS) and X-ray Raman scattering (XRS) are compared for acoustical modes of 4H SiC. Schottky barrier heights are obtained for 4H and 6H SiC on different crystal faces using three different measuring techniques. Scanning electron microscopy (SEM) is used to display a variety of porous SiC morphologies achieved in n-type and p-type SiC.This paper is intended to be the introduction to the “CHARACTERIZATION” section of this volume. To serve this purpose we illustrate the subject matter with new results using four distinct experimental techniques.
PB Cambridge University Press
SN 0272-9172
YR 2003
FD 2003
LK https://uvadoc.uva.es/handle/10324/65354
UL https://uvadoc.uva.es/handle/10324/65354
LA eng
NO Mat. Res. Soc. Symp. Proc. Vol. 742, K.3.1.1 (2003)
DS UVaDOC
RD 22-nov-2024