RT info:eu-repo/semantics/article
T1 Spin–orbit splitting of acceptor states in Si and C
A1 Wysmolek, A
A1 Ruf, T
A1 Cardona, M
A1 Serrano Gutiérrez, Jorge
AB We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data.
PB Elsevier
SN 0921-4526
YR 1999
FD 1999
LK https://uvadoc.uva.es/handle/10324/65366
UL https://uvadoc.uva.es/handle/10324/65366
LA eng
NO Physica B 273-641 (1999) 640-643
DS UVaDOC
RD 24-dic-2024