RT info:eu-repo/semantics/conferenceObject
T1 Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures
A1 García García, Héctor
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 González, M.B.
A1 Acero, M.C.
A1 Campabadal, F.
K1 Temperature measurement
K1 Electrodes
K1 Logic gates
K1 Tin
K1 Transient analysis
K1 Semiconductor device measurement
K1 high-k dielectrics
K1 metal gates
K1 atomic layer deposition
K1 MIS capacitors
K1 electrical characterization
AB The electrical properties of Al 2 O 3 -based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as aluminum and oxygen precursors, respectively. The use of aluminum as the gate electrode prevents the formation of defects inside the oxide layers that could trap charge as has been found for W and TiN gate electrodes using C-V curves and flat band voltage transients. The use of TiN or W as gate electrodes increases the interfacial trap density. However, the leakage current, that follows a Fowler-Nordheim behavior, is low when using TiN electrodes due to a higher cathode barrier height.
PB Institute of Electrical and Electronics Engineers
SN 978-1-5090-5072-7
YR 2017
FD 2017
LK https://uvadoc.uva.es/handle/10324/65896
UL https://uvadoc.uva.es/handle/10324/65896
LA spa
NO 2017 Spanish Conference on Electron Devices (CDE), Barcelona, Spain, 2017, p. 1-4
NO Producción Científica
DS UVaDOC
RD 06-oct-2024