RT info:eu-repo/semantics/article
T1 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 García García, Héctor
A1 Miranda, E.
A1 González, M.B.
A1 Campabadal, F.
K1 RRAM devices
K1 Admittance cycles
K1 Hafnium oxide
K1 Atomic layer deposition
AB Similarly to the current, the admittance of TiN/Ti/HfO2/W-based resistive memories shows well-defined minor switching loops associated with partial transitions between the ON and OFF states. Excellent control of the intermediate states is achieved in these samples by means of a proper sequence of input signals and current compliances. It is shown that, as the resistance state of the conductive filament changes, the associated susceptance also exhibits multilevel response. Susceptance values are negative in the ON state, indicating an inductive behavior of the conductive filaments.
PB ELSEVIER
SN 0167-9317
YR 2017
FD 2017
LK https://uvadoc.uva.es/handle/10324/65968
UL https://uvadoc.uva.es/handle/10324/65968
LA spa
NO Microelectronic Engineering, 2017, Vol. 178, p. 30-33
NO Producción Científica
DS UVaDOC
RD 22-nov-2024