RT info:eu-repo/semantics/article
T1 Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films
A1 Tamm, Aile
A1 Kalam, Kristjan
A1 Seemen, Helina
A1 Kozlova, Jekaterina
A1 Kukli, Kaupo
A1 Aarik, Jaan
A1 Link, Joosep
A1 Stern, Raivo
A1 Dueñas, Salvador
A1 Castán, Helena
K1 Deposition
K1 Layers
K1 Magnetic properties
K1 Oxides
K1 Thin films
AB Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.
PB ACS Omega
SN 2470-1343
YR 2017
FD 2017
LK https://uvadoc.uva.es/handle/10324/65970
UL https://uvadoc.uva.es/handle/10324/65970
LA spa
NO ACS Omega, 2017, Vol.2, n. 12, p. 8836–8842
NO Producción Científica
DS UVaDOC
RD 17-jul-2024