RT info:eu-repo/semantics/article
T1 A physically based model for resistive memories including a detailed temperature and variability description
A1 González-Cordero, G.
A1 González, M.B.
A1 García, H.
A1 Campabadal, F.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Jiménez-Molinos, F.
A1 Roldán, J.B.
K1 Resistive RAM
K1 ReRAM
K1 Physical model
K1 Stochastic variability
AB A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead to different resistive states. The validity of the model has been proved for different technologies of metal-insulator-metal bipolar resistive memories. The model can be implemented in Verilog-A for circuit simulation purposes.
PB ELSEVIER
SN 0167-9317
YR 2017
FD 2017
LK https://uvadoc.uva.es/handle/10324/65983
UL https://uvadoc.uva.es/handle/10324/65983
LA spa
NO Microelectronic Engineering, 2017, Vol. 178, p. 26-29
NO Producción Científica
DS UVaDOC
RD 22-dic-2024