RT info:eu-repo/semantics/conferenceObject
T1 Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 González Ossorio, Óscar
A1 Domínguez, L.A.
A1 García García, Héctor
A1 Kalam, K.
A1 Ritala, M.
A1 Leskelä, M.
K1 Resistive memories
K1 Admittance memory cycles
K1 Ta2O5:ZrO2 ALD films
AB The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role.
PB Institute of Electrical and Electronics Engineers
SN 978-1-5386-5108-7
YR 2018
FD 2018
LK https://uvadoc.uva.es/handle/10324/65996
UL https://uvadoc.uva.es/handle/10324/65996
LA eng
NO 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 2017, Barcelona, Spain, p. 1-4
NO Producción Científica
DS UVaDOC
RD 24-nov-2024