RT info:eu-repo/semantics/article
T1 Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
A1 Vinuesa Sanz, Guillermo
A1 García García, Héctor
A1 Poblador, Samuel
A1 González, Mireia B
A1 Campabadal, Francesca
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
K1 Electrical engineering
K1 Conductive filament
K1 Resistive switching
K1 Temperature dependence
K1 Filamento conductor
K1 Conmutación resistiva
K1 Dependencia de temperatura
K1 2202.03 Electricidad
AB In this letter, we study the impact of the temperature on the resistive switching effect of TiN/Ti/HfO2/W metal–insulator-metal devices. An analysis of the conduction mechanisms is made, with the low resistance state being ruled by nearest neighbor hopping, while the conduction in the high resistance state is dominated by Schottky emission. Taking into account the filamentary mechanism behind the resistive switching effect, a thorough analysis of the Schottky emission allows for the calculation of the gap between conductive filament tip and metal electrode in the high resistance state. We report an increase of this gap when temperature lowers below a certain value. Moreover, the mentioned gap adopts values of integer multiples of the the mean distance between traps obtained by the hopping model.
PB Elsevier
SN 0167-577X
YR 2024
FD 2024
LK https://uvadoc.uva.es/handle/10324/66009
UL https://uvadoc.uva.es/handle/10324/66009
LA eng
NO Materials Letters, 2024, vol. 357, 135699
NO Producción Científica
DS UVaDOC
RD 11-jul-2024