RT info:eu-repo/semantics/article
T1 An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
A1 Maldonado, D.
A1 Aguilera-Pedregosa, C.
A1 Vinuesa Sanz, Guillermo
A1 García, H.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Aldana, S.
A1 González, M.B.
A1 Moreno, E.
A1 Jiménez-Molinos, F.
A1 Campabadal, F.
A1 Roldán, J.B.
K1 Resistive switching memory
K1 RRAM
K1 Temperature characterization
K1 Simulation
K1 Variability
K1 Modeling
K1 Kinetic Monte Carlo
K1 Series resistance
AB An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that reproduce well the nonlinearity and stochasticity of resistive switching devices, have been employed to explain the experimental results. The series resistance and the transition voltages and currents have been extracted from devices based on the TiN/Ti/HfO2/W stack we have fabricated and measured at temperatures ranging from 77 K to 350 K. We observed that the variability for all the magnitudes analyzed was much higher at low temperatures. In the kMC simulations, we obtained conductive filaments (CFs) with less compactness at low temperatures. This led us to explain the higher variability, based on the variations of the CF morphology and density seen at low temperatures.
PB ELSEVIER
SN 0960-0779
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/66071
UL https://uvadoc.uva.es/handle/10324/66071
LA spa
NO Volume 160, July 2022, 112247
DS UVaDOC
RD 22-dic-2024