RT info:eu-repo/semantics/article
T1 Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map
A1 Picos, Rodrigo
A1 Stavrinides, Stavros G.
A1 Al Chawa, Mohamad Moner
A1 de Benito, Carola
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Hatzikraniotis, Euripides
A1 Chua, Leon O.
K1 Memristor
K1 RRAM
K1 Compact modeling
K1 Phase space
K1 Charge and flux
AB Memristors were proposed in the early 1970s by Leon Chua as a new electrical elementlinking charge to flux. Since that first introduction, these devices have positioned themselves to beconsidered as possible fundamental ones for the generations of electronic devices to come. In thispaper, we propose a new way to investigate the effects of the electrical variables on the memristanceof a device, and we successfully apply this technique to model the behavior of a TiN/Ti/HfO2/WReRAM structure. To do so, we initially apply the Dynamic Route Map technique in the generalcase to obtain an approximation to the differential equation that determines the behaviour of thedevice. This is performed by choosing a variable of interest and observing the evolution of its owntemporal derivative versus both its value and the applied voltage. Then, according to this technique,it is possible to obtain an approach to the governing equations with no need to make any assumptionabout the underlying physical mechanisms, by fitting a function to this. We have used a polynomialfunction, which allows accurate reproduction of the observed electrical behavior of the measureddevices, by integrating the resulting differential equation system.
PB MDPI
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/66073
UL https://uvadoc.uva.es/handle/10324/66073
LA spa
NO Electronics 2022, 11(11), 1672: Resistive Memory Characterization, Simulation, and Compact Modeling,
DS UVaDOC
RD 22-nov-2024