RT info:eu-repo/semantics/article
T1 Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
A1 Vinuesa Sanz, Guillermo
A1 García, Héctor
A1 González, Mireia B.
A1 Kalam, Kristjan
A1 Zabala, Miguel
A1 Tarre, Aivar
A1 Kukli, Kaupo
A1 Tamm, Aile
A1 Campabadal, Francesca
A1 Jiménez, Juan
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
K1 resistive switching
K1 thickness dependence
K1 conductive filaments
K1 RRAM
K1 polarity change
K1 hafnium oxide
AB In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
PB MDPI
SN 2079-9292
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/66143
UL https://uvadoc.uva.es/handle/10324/66143
LA spa
NO Electronics 2022, Resistive Memory Characterization, Simulation, and Compact Modeling: 11(3), 479
NO Producción Científica
DS UVaDOC
RD 22-nov-2024