RT info:eu-repo/semantics/conferenceObject
T1 Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
A1 Santa Cruz González, C.
A1 Sahelices Fernández, Benjamín
A1 Jiménez, J.
A1 González Ossorio, Óscar
A1 Castán Lanaspa, María Helena
A1 González, M.B.
A1 Vinuesa Sanz, Guillermo
A1 Dueñas Carazo, Salvador
A1 Campabadal, F.
A1 García García, Héctor
K1 Memristor
K1 Resistive-switching device
K1 Memdiode
K1 Semiempirical model
AB A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli
PB Institute of Electrical and Electronics Engineers
SN 978-1-6654-4452-1
YR 2021
FD 2021
LK https://uvadoc.uva.es/handle/10324/66144
UL https://uvadoc.uva.es/handle/10324/66144
LA eng
NO 13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 74-77
NO Producción Científica
DS UVaDOC
RD 24-nov-2024